| \% BYX10GP7 WWw'ViShay'C°m Vishay General Semiconductor 100 100 :1 Pulse Width : 300 051 D/D Duty Cycle DJ instantaneous FonNard Surge Current (A) Junction Capacitance (pF) 3 0 20 40 60 80 100 120 140 0.01 1 06 00 10 12 14 1.0 1.8 2.0Instantaneous Forward Voltage (V) Reverse Voltage (V)Fig. 3 - Typical Instantaneous FonNard Characteristics Fig. 5 - Typical Junction Capacitance 10 0.01 instantaneous Reverse Current (UA) o Percent o( Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics PACKAGE ouTLINE DIMENSIONS in inches (millimeters) Do-204AL (Do-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) W ‘0.205 (5.2)0.160 (4.1) DIA. 1.0 (25.4)MIN. 0.034 (0.88) 0.028 (0.71) DIA. Revision: 12-Dec-13 3 Document Number: 89112 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@Vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 |